A balanced ternary processor microarchitecture featuring a novel 3-FET cyclic SRAM cell with three stable states (not a bi-stable latch), modulo-3 clock generation for three-phase pipeline operation, and a three-stage pipeline. The PANINI processor executes T3ISA instructions defined by P4.
The 3-FET cyclic SRAM cell is identified as the highest commercial value claim in the portfolio. Unlike conventional binary SRAM which uses 6 transistors for two stable states, this cell achieves three stable states with only three transistors — a fundamental advance in memory density for ternary computing.
The 3-FET cyclic SRAM cell — a memory element with three stable states using only three transistors — represents the highest commercial value claim in the portfolio.
The patent protects the following architectural innovations:
Microarchitecture. The PANINI processor sits between the gate library (P6) and the system software layer (P5, P8). It is composed from P6 standard cells and executes T3ISA instructions defined by P4.
The PANINI processor architecture and 3-FET SRAM cell are available for licensing to processor designers and memory manufacturers.
Licensing Information