A Unified Molecular Fabrication Method for Simultaneous Synthesis of GNR Gate Electrodes and CNT Channels

Overview

A chemical vapor deposition (CVD) process using a benzene precursor for simultaneous synthesis of graphene nanoribbon gate electrodes and carbon nanotube channels. The method exploits the aromatic ring structure of benzene to control chirality and diameter during synthesis.

This unified fabrication approach produces both critical components of the THATTE Structure FET (P1) in a single process, reducing manufacturing complexity and ensuring structural compatibility between gate and channel materials.

Priority date established via notarized affidavit (2006) and CIVEN certification (Italy), demonstrating early conception of the core device concept.

Key Claims

The patent protects the following process innovations:

• A CVD process for simultaneous synthesis of GNR and CNT from a single precursor
• Use of benzene as a carbon precursor enabling controlled nanostructure formation
• Chirality and diameter control during carbon nanotube synthesis
• A unified fabrication method producing both gate electrode and channel material
• Process parameters for achieving the structural specifications required by the THATTE device

Layer in the Stack

Foundation — Hardware & Physics. This process patent provides the manufacturing method for the THATTE Structure device (P1). Without this fabrication process, the device cannot be physically realized.

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